PART |
Description |
Maker |
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
VP0300LS VP0300L VQ2001P VQ2001J 70217 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET) From old datasheet system P-Channel Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V,夹断电.18AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system N-CHANNEL MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 TE Connectivity, Ltd.
|
APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
STB60N03L-10 4892 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
|
MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 From old datasheet system M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|